Infineon Technologies - IPB017N10N5LF

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IPB017N10N5LF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB017N10N5LF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 313 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel;
Datasheet IPB017N10N5LF Datasheet
In Stock219,623
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 180 A
Maximum Pulsed Drain Current (IDM): 720 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): 313 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0017 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 979 mJ
JEDEC-95 Code: TO-263
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Maximum Drain Current (Abs) (ID): 180 A
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