IPB048N15N5ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPB048N15N5ATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 230 mJ; Minimum DS Breakdown Voltage: 150 V; Maximum Drain-Source On Resistance: .0048 ohm;
Datasheet	IPB048N15N5ATMA1 Datasheet
In Stock	21,161

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	120 A
Maximum Pulsed Drain Current (IDM):	480 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0048 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	230 mJ
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	150 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
21,161	-	-

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