Infineon Technologies - IPB065N15N3G

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IPB065N15N3G by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB065N15N3G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JESD-609 Code: e3; Maximum Drain Current (ID): 130 A;
Datasheet IPB065N15N3G Datasheet
In Stock1,089
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 130 A
Maximum Pulsed Drain Current (IDM): 520 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): 300 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0065 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 780 mJ
JEDEC-95 Code: TO-263
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 150 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 130 A
Peak Reflow Temperature (C): 260
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