IPB100N04S204ATMA4 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPB100N04S204ATMA4
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 40 V;
Datasheet	IPB100N04S204ATMA4 Datasheet
In Stock	11,780

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	100 A
Maximum Pulsed Drain Current (IDM):	400 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0033 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	810 mJ
Other Names:	IPB100N04S204ATMA4-ND SP001058122 IPB100N04S204ATMA4DKR IFEINFIPB100N04S204ATMA4 IPB100N04S204ATMA4CT 2156-IPB100N04S204ATMA4 IPB100N04S204ATMA4TR
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	40 V
Additional Features:	AVALANCHE RATED

Pricing (USD)

Qty.	Unit Price	Ext. Price
11,780	-	-

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