IPB65R225C7ATMA2 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPB65R225C7ATMA2
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
Datasheet	IPB65R225C7ATMA2 Datasheet
In Stock	574

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	11 A
Maximum Pulsed Drain Current (IDM):	41 A
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	63 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.225 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	48 mJ
Other Names:	IPB65R225C7ATMA2TR SP002447552 IPB65R225C7ATMA2CT 2156-IPB65R225C7ATMA2 IPB65R225C7ATMA2DKR ROCINFIPB65R225C7ATMA2
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	650 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
574	$1.090	$625.660

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