Infineon Technologies - IPB70N10S3L12ATMA1

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IPB70N10S3L12ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB70N10S3L12ATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 70 A; Case Connection: DRAIN;
Datasheet IPB70N10S3L12ATMA1 Datasheet
In Stock7,128
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 70 A
Maximum Pulsed Drain Current (IDM): 280 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 125 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .012 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 154 mJ
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID): 70 A
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