IPB80N04S403ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPB80N04S403ATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .003 ohm; JESD-30 Code: R-PSSO-G2; Operating Mode: ENHANCEMENT MODE;
Datasheet	IPB80N04S403ATMA1 Datasheet
In Stock	1,292

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	200 mJ
Other Names:	IPB80N04S403ATMA1TR IPB80N04S4-03-ND IPB80N04S4-03 IPB80N04S403ATMA1DKR SP000671628 IPB80N04S403ATMA1CT
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	80 A
JEDEC-95 Code:	TO-263AB
Maximum Pulsed Drain Current (IDM):	320 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	2
Minimum DS Breakdown Voltage:	40 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	.003 ohm
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,292	-	-

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;