Infineon Technologies - IPB80N04S403ATMA1

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IPB80N04S403ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB80N04S403ATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .003 ohm; JESD-30 Code: R-PSSO-G2; Operating Mode: ENHANCEMENT MODE;
Datasheet IPB80N04S403ATMA1 Datasheet
In Stock1,292
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 200 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 80 A
JEDEC-95 Code: TO-263AB
Maximum Pulsed Drain Current (IDM): 320 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 2
Minimum DS Breakdown Voltage: 40 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .003 ohm
Moisture Sensitivity Level (MSL): 1
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