Infineon Technologies - IPBE65R145CFD7A

IPBE65R145CFD7A by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPBE65R145CFD7A
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 98 W; Minimum DS Breakdown Voltage: 650 V; Package Shape: RECTANGULAR;
Datasheet IPBE65R145CFD7A Datasheet
In Stock945
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 17 A
Maximum Pulsed Drain Current (IDM): 72 A
Surface Mount: YES
No. of Terminals: 7
Maximum Power Dissipation (Abs): 98 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G7
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .145 ohm
Maximum Feedback Capacitance (Crss): 25 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 650 V
Additional Features: HIGH RELIABILITY
Reference Standard: AEC-Q101
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