Infineon Technologies - IPC218N04N3X1SA1

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IPC218N04N3X1SA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPC218N04N3X1SA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain-Source On Resistance: .05 ohm;
Datasheet IPC218N04N3X1SA1 Datasheet
In Stock305
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum DS Breakdown Voltage: 40 V
Terminal Position: UNSPECIFIED
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XXUC-N
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .05 ohm
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