Infineon Technologies - IPC26N12NX1SA1

  1. Home
  2. Infineon Technologies - IPC26N12NX1SA1
IPC26N12NX1SA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IPC26N12NX1SA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Body Material: UNSPECIFIED; Package Shape: RECTANGULAR;
Datasheet IPC26N12NX1SA1 Datasheet
In Stock141
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum DS Breakdown Voltage: 120 V
Terminal Position: UNSPECIFIED
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XXUC-N
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .1 ohm
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
141 $3.490 $492.090

Popular Products

Category Top Products

ZVP2106ASTOA by Diodes Incorporated

ZVP2106ASTOA

Diodes Incorporated

ZVP2106ASTOA by Diodes Inc. is a P-CHANNEL FET with 60V DS breakdown voltage, 0.28A ID, and 5 ohm RDS(on). Ideal for switching applications, it features SILICON transistor element, ENHANCEMENT MODE operation, and METAL-OXIDE SEMICONDUCTOR technology.
IRLML6302TRPBF by International Rectifier

IRLML6302TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; No. of Terminals: 3; Terminal Form: GULL WING;
ZVP2106A by Diodes Incorporated

ZVP2106A

Diodes Incorporated

ZVP2106A by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage and 0.28A Drain Current. It is used in applications requiring low power dissipation, such as signal amplification in electronic circuits. The transistor operates in enhancement mode with a max temperature of 150°C, making it suitable for various small signal switching tasks.
2N7002K by Hy Electronic

2N7002K

Hy Electronic

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Additional Features: ULTRA LOW RESISTANCE; Package Body Material: PLASTIC/EPOXY;
2N7002 by Onsemi

2N7002

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;
MMBFJ201 by National Semiconductor

MMBFJ201

National Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; No. of Elements: 1; Package Shape: RECTANGULAR;
FDS5670 by Onsemi

FDS5670

Onsemi

FDS5670 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 10A Drain Current, and 0.014 ohm On Resistance. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a RECTANGULAR package with GULL WING terminals. Operating at up to 150°C, it has a max power dissipation of 2.5W and is surface mountable.
BSS84AK,215 by NXP Semiconductors

BSS84AK,215

NXP Semiconductors

NXP Semiconductors' BSS84AK,215 is a P-CHANNEL FET with 50V DS breakdown voltage and 0.18A drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1.14W.
BSS84AKMB,315 by Nexperia

BSS84AKMB,315

Nexperia

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Package Style (Meter): CHIP CARRIER; JESD-30 Code: R-PBCC-N3;
FDC5612 by Onsemi

FDC5612

Onsemi

FDC5612 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 4.3A and an On Resistance of 0.055 ohm. With a small outline package style and operating temperature up to 150°C, it is suitable for various electronic devices requiring high power dissipation.
2N7002-T1-E3 by Vishay Intertechnology

2N7002-T1-E3

Vishay Intertechnology

Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.
2N7002K by Onsemi

2N7002K

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 350 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: 2 ohm;
BSS123 by Changzhou Galaxy Century Microelectronics

BSS123

Changzhou Galaxy Century Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 6.3 pF; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSS138LT3 by Motorola

BSS138LT3

Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Additional Features: LOGIC LEVEL COMPATIBLE; Operating Mode: ENHANCEMENT MODE;
T2N7002BK,LM(T by Toshiba

T2N7002BK,LM(T

Toshiba

T2N7002BK,LM(T by Toshiba is a N-CHANNEL FET with 60V DS breakdown voltage and 0.4A ID. Ideal for switching applications, it features a built-in diode and resistor in a small outline package. Operating in enhancement mode, it has 1W power dissipation and 1.75 ohm max on-resistance.
BSS84 by Fairchild Semiconductor

BSS84

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel;
BSS84W-7-F by Diodes Incorporated

BSS84W-7-F

Diodes Incorporated

BSS84W-7-F by Diodes Inc. is a P-channel FET with 50V breakdown voltage and 0.13A drain current, ideal for switching applications. It features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.2W. This MOSFET comes in a small outline package with gull wing terminals, suitable for surface mount assembly at temperatures up to 150°C.
FDC6305N by Fairchild Semiconductor

FDC6305N

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Minimum DS Breakdown Voltage: 20 V; Transistor Application: SWITCHING;
2N7002T by Vishay Siliconix

2N7002T

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e0; Package Shape: RECTANGULAR; Maximum Feedback Capacitance (Crss): 5 pF;
BSD316SNH6327XTSA1 by Infineon Technologies

BSD316SNH6327XTSA1

Infineon Technologies

Infineon's BSD316SNH6327XTSA1 is a N-CHANNEL FET with 30V DS breakdown voltage, ideal for automotive applications. Featuring single configuration with built-in diode, it has 6 terminals in gull wing form and operates in enhancement mode. With 0.5W max power dissipation and -55 to 150 °C operating temp, it offers low 0.0016 ohm RDS(on) for efficient performance.