Infineon Technologies - IPC302N20NFDX1SA1

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IPC302N20NFDX1SA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPC302N20NFDX1SA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .1 ohm; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet IPC302N20NFDX1SA1 Datasheet
In Stock1,545
NAME DESCRIPTION
Other Names: 2156-IPC302N20NFDX1SA1
INFINFIPC302N20NFDX1SA1
SP001363494
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum DS Breakdown Voltage: 200 V
Terminal Position: UNSPECIFIED
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XXUC-N
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .1 ohm
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