IPD038N06NF2S by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPD038N06NF2S
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Avalanche Energy Rating (EAS): 94 mJ; Reference Standard: IEC-61249-2-21;
Datasheet	IPD038N06NF2S Datasheet
In Stock	432

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	120 A
Maximum Pulsed Drain Current (IDM):	480 A
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	107 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.00385 ohm
Avalanche Energy Rating (EAS):	94 mJ
Maximum Feedback Capacitance (Crss):	43 pF
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Reference Standard:	IEC-61249-2-21

Pricing (USD)

Qty.	Unit Price	Ext. Price
432	-	-

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