Infineon Technologies - IPD30N06S2L13ATMA4

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IPD30N06S2L13ATMA4 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD30N06S2L13ATMA4
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Avalanche Energy Rating (EAS): 240 mJ; Terminal Position: SINGLE;
Datasheet IPD30N06S2L13ATMA4 Datasheet
In Stock111,070
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 30 A
Maximum Pulsed Drain Current (IDM): 200 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .017 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 240 mJ
Other Names: IPD30N06S2L13ATMA4TR
SP001061280
2156-IPD30N06S2L13ATMA4
IPD30N06S2L13ATMA4DKR
INFINFIPD30N06S2L13ATMA4
IPD30N06S2L13ATMA4-ND
IPD30N06S2L13ATMA4CT
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 55 V
Reference Standard: AEC-Q101
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