Infineon Technologies - IPD50P04P4L11ATMA1

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IPD50P04P4L11ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD50P04P4L11ATMA1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 200 A; JEDEC-95 Code: TO-252; Terminal Finish: Tin (Sn);
Datasheet IPD50P04P4L11ATMA1 Datasheet
In Stock33,609
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 50 A
Maximum Pulsed Drain Current (IDM): 200 A
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0106 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 18 mJ
Other Names: IPD50P04P4L-11
SP000671156
IPD50P04P4L11
IPD50P04P4L11ATMA1CT
2156-IPD50P04P4L11ATMA1
IPD50P04P4L-11DKR
IPD50P04P4L11ATMA1DKR
IPD50P04P4L-11DKR-ND
IPD50P04P4L-11TR-ND
IPD50P04P4L11ATMA1TR
IPD50P04P4L-11TR
IPD50P04P4L-11CT-ND
INFINFIPD50P04P4L11ATMA1
IPD50P04P4L-11CT
JEDEC-95 Code: TO-252
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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