Infineon Technologies - IPD60R145CFD7ATMA1

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IPD60R145CFD7ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD60R145CFD7ATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; JEDEC-95 Code: TO-252; No. of Elements: 1;
Datasheet IPD60R145CFD7ATMA1 Datasheet
In Stock2,196
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 16 A
Maximum Pulsed Drain Current (IDM): 58 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Maximum Power Dissipation (Abs): 83 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .145 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 68 mJ
Other Names: 448-IPD60R145CFD7ATMA1TR
SP001715664
448-IPD60R145CFD7ATMA1DKR
448-IPD60R145CFD7ATMA1CT
IPD60R145CFD7ATMA1-ND
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 600 V
Additional Features: HIGH RELIABILITY
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