IPD60R1K0CEAUMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPD60R1K0CEAUMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61 W; Avalanche Energy Rating (EAS): 46 mJ; JEDEC-95 Code: TO-252;
Datasheet	IPD60R1K0CEAUMA1 Datasheet
In Stock	655

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	6.8 A
Maximum Pulsed Drain Current (IDM):	12 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	61 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	1 ohm
Moisture Sensitivity Level (MSL):	3
Avalanche Energy Rating (EAS):	46 mJ
Other Names:	ROCINFIPD60R1K0CEAUMA1 SP001396896 448-IPD60R1K0CEAUMA1DKR 448-IPD60R1K0CEAUMA1CT 448-IPD60R1K0CEAUMA1TR 2156-IPD60R1K0CEAUMA1 IPD60R1K0CEAUMA1-ND
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Minimum DS Breakdown Voltage:	600 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
655	$0.207	$135.585

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

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OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;