Infineon Technologies - IPG16N10S461AATMA1

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IPG16N10S461AATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPG16N10S461AATMA1
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Maximum Drain-Source On Resistance: .061 ohm; Transistor Element Material: SILICON;
Datasheet IPG16N10S461AATMA1 Datasheet
In Stock455
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 33 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 16 A
Maximum Pulsed Drain Current (IDM): 64 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 8
Minimum DS Breakdown Voltage: 100 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Reference Standard: AEC-Q101
Maximum Drain-Source On Resistance: .061 ohm
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
455 $0.427 $194.285

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