Infineon Technologies - IPG20N06S4L11AATMA1

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IPG20N06S4L11AATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPG20N06S4L11AATMA1
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IPG20N06S4L11AATMA1 Datasheet
In Stock542
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 165 mJ
Other Names: 448-IPG20N06S4L11AATMA1TR
IPG20N06S4L11AATMA1-ND
448-IPG20N06S4L11AATMA1DKR
SP001200162
448-IPG20N06S4L11AATMA1CT
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 20 A
Maximum Pulsed Drain Current (IDM): 80 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 8
Minimum DS Breakdown Voltage: 60 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Drain-Source On Resistance: .0112 ohm
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
542 $0.739 $400.538

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