Infineon Technologies - IPG20N10S4L22ATMA1

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IPG20N10S4L22ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPG20N10S4L22ATMA1
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Terminal Finish: TIN; Maximum Drain Current (ID): 20 A;
Datasheet IPG20N10S4L22ATMA1 Datasheet
In Stock33,642
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 20 A
Maximum Pulsed Drain Current (IDM): 80 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 60 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .022 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 130 mJ
Maximum Feedback Capacitance (Crss): 84 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Reference Standard: AEC-Q101
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