Infineon Technologies - IPI120N10S4-05

IPI120N10S4-05 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPI120N10S4-05
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; Peak Reflow Temperature (C): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
Datasheet IPI120N10S4-05 Datasheet
In Stock946
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 120 A
Maximum Pulsed Drain Current (IDM): 480 A
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): 190 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0053 ohm
Avalanche Energy Rating (EAS): 330 mJ
Maximum Feedback Capacitance (Crss): 200 pF
JEDEC-95 Code: TO-262AA
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
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