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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | IPI70N10S312AKSA1 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): IN-LINE; Maximum Drain-Source On Resistance: .0116 ohm; Terminal Form: THROUGH-HOLE; |
Datasheet | IPI70N10S312AKSA1 Datasheet |
In Stock | 19,706 |
NAME | DESCRIPTION |
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Avalanche Energy Rating (EAS): | 410 mJ |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 70 A |
JEDEC-95 Code: | TO-262AA |
Maximum Pulsed Drain Current (IDM): | 280 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
Terminal Finish: | TIN |
JESD-609 Code: | e3 |
No. of Terminals: | 3 |
Minimum DS Breakdown Voltage: | 100 V |
Terminal Position: | SINGLE |
Package Style (Meter): | IN-LINE |
JESD-30 Code: | R-PSIP-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Drain-Source On Resistance: | .0116 ohm |