IPL65R099C7AUMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPL65R099C7AUMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Avalanche Energy Rating (EAS): 118 mJ; No. of Terminals: 4;
Datasheet	IPL65R099C7AUMA1 Datasheet
In Stock	2,233

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	21 A
Maximum Pulsed Drain Current (IDM):	100 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	4
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PSSO-N4
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.099 ohm
Moisture Sensitivity Level (MSL):	2A
Avalanche Energy Rating (EAS):	118 mJ
Other Names:	448-IPL65R099C7AUMA1DKR 448-IPL65R099C7AUMA1CT IFEINFIPL65R099C7AUMA1 SP001032722 2156-IPL65R099C7AUMA1 IPL65R099C7AUMA1-ND 448-IPL65R099C7AUMA1TR
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	650 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,233	-	-

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