IPP110N20N3GXKSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPP110N20N3GXKSA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 560 mJ; Maximum Operating Temperature: 175 Cel; Minimum DS Breakdown Voltage: 200 V;
Datasheet	IPP110N20N3GXKSA1 Datasheet
In Stock	1,575

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	88 A
Maximum Pulsed Drain Current (IDM):	352 A
Surface Mount:	NO
Terminal Finish:	TIN
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.011 ohm
Avalanche Energy Rating (EAS):	560 mJ
Other Names:	IPP110N20N3 G-ND SP000677892 IPP110N20N3 G IPP110N20N3GXKSA1-ND IPP110N20N3G 448-IPP110N20N3GXKSA1
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	200 V
Qualification:	Not Qualified

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,575	-	-

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