Infineon Technologies - IPP80N06S207AKSA1

IPP80N06S207AKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPP80N06S207AKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; No. of Elements: 1; Avalanche Energy Rating (EAS): 530 mJ;
Datasheet IPP80N06S207AKSA1 Datasheet
In Stock537
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 530 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 215 pF
Maximum Drain Current (ID): 80 A
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 320 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -55 Cel
No. of Terminals: 3
Minimum DS Breakdown Voltage: 55 V
Maximum Power Dissipation (Abs): 250 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .0066 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
537 $0.737 $395.769

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