Infineon Technologies - IPP80N06S209AKSA2

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IPP80N06S209AKSA2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPP80N06S209AKSA2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Package Body Material: PLASTIC/EPOXY; Reference Standard: AEC-Q101;
Datasheet IPP80N06S209AKSA2 Datasheet
In Stock230
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 80 A
Maximum Pulsed Drain Current (IDM): 320 A
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .0091 ohm
Avalanche Energy Rating (EAS): 370 mJ
Other Names: IFEINFIPP80N06S209AKSA2
2156-IPP80N06S209AKSA2
SP001061400
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 55 V
Reference Standard: AEC-Q101
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