Infineon Technologies - IPP80N06S2L11AKSA2

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IPP80N06S2L11AKSA2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPP80N06S2L11AKSA2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; Terminal Form: THROUGH-HOLE;
Datasheet IPP80N06S2L11AKSA2 Datasheet
In Stock19,106
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 280 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 80 A
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 320 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Minimum DS Breakdown Voltage: 55 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Maximum Drain-Source On Resistance: .0147 ohm
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