Infineon Technologies - IPTG044N15NM5

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IPTG044N15NM5 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPTG044N15NM5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; No. of Terminals: 8; Minimum DS Breakdown Voltage: 150 V;
Datasheet IPTG044N15NM5 Datasheet
In Stock490
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 321 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 53 pF
Maximum Drain Current (ID): 174 A
Maximum Pulsed Drain Current (IDM): 696 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 8
Minimum DS Breakdown Voltage: 150 V
Maximum Power Dissipation (Abs): 300 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0044 ohm
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