Infineon Technologies - IPW60R041P6FKSA1

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IPW60R041P6FKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPW60R041P6FKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Maximum Pulsed Drain Current (IDM): 267 A; Package Style (Meter): FLANGE MOUNT;
Datasheet IPW60R041P6FKSA1 Datasheet
In Stock390
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 1954 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
JEDEC-95 Code: TO-247
Maximum Pulsed Drain Current (IDM): 267 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Minimum DS Breakdown Voltage: 600 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .041 ohm
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