Infineon Technologies - IPZ40N04S5L7R4ATMA1

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IPZ40N04S5L7R4ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPZ40N04S5L7R4ATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 160 A; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 8;
Datasheet IPZ40N04S5L7R4ATMA1 Datasheet
In Stock144,124
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 24 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 40 A
Maximum Pulsed Drain Current (IDM): 160 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 8
Minimum DS Breakdown Voltage: 40 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Reference Standard: AEC-Q101
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0107 ohm
Moisture Sensitivity Level (MSL): 1
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