Infineon Technologies - IQE065N10NM5

IQE065N10NM5 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IQE065N10NM5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Case Connection: SOURCE; Minimum DS Breakdown Voltage: 100 V;
Datasheet IQE065N10NM5 Datasheet
In Stock167
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 85 A
Maximum Pulsed Drain Current (IDM): 341 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 100 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: SOURCE
Maximum Power Dissipation Ambient: 2.5 W
Maximum Drain-Source On Resistance: .0065 ohm
Avalanche Energy Rating (EAS): 147 mJ
Maximum Feedback Capacitance (Crss): 32 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
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Pricing (USD)

Qty. Unit Price Ext. Price
167 $2.632 $439.544

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