IRD3909RPBF by Infineon Technologies | Diodes

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRD3909RPBF
Description	RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: SOLDER LUG; No. of Terminals: 1; Surface Mount: NO; Package Shape: ROUND;
Datasheet	IRD3909RPBF Datasheet
In Stock	113

NAME	DESCRIPTION
Package Body Material:	METAL
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Forward Voltage (VF):	1.8 V
Config:	SINGLE
Diode Type:	RECTIFIER DIODE
Maximum Output Current:	30 A
Surface Mount:	NO
No. of Terminals:	1
Terminal Position:	UPPER
Package Style (Meter):	POST/STUD MOUNT
JESD-30 Code:	O-MUPM-D1
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	SOLDER LUG
Maximum Operating Temperature:	125 Cel
Case Connection:	ANODE
No. of Phases:	1
Maximum Repetitive Peak Reverse Voltage:	50 V
JEDEC-95 Code:	DO-203AB
Minimum Operating Temperature:	-40 Cel
Maximum Non Repetitive Peak Forward Current:	300 A
Diode Element Material:	SILICON
Peak Reflow Temperature (C):	NOT SPECIFIED
Application:	FAST RECOVERY
Maximum Reverse Recovery Time:	.35 us

Pricing (USD)

Qty.	Unit Price	Ext. Price
113	-	-

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

CONNECTOR ACCESSORY; IEC Conformity: NO; Contact Gender: FEMALE; DIN Conformity: NO; MIL-Connector Accessory Name: CONTACT; Tool Settings: M22520/2-10;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; No. of Functions: 1; Package Body Material: PLASTIC/EPOXY; Surface Mount: NO;

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;