IRF200P222 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRF200P222
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
Datasheet	IRF200P222 Datasheet
In Stock	1,383

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	1070 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	182 A
JEDEC-95 Code:	TO-247AC
Maximum Pulsed Drain Current (IDM):	728 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	3
Minimum DS Breakdown Voltage:	200 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0066 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,383	-	-

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