Infineon Technologies - IRF40R207TR

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IRF40R207TR by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF40R207TR
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Package Shape: RECTANGULAR; No. of Terminals: 2;
Datasheet IRF40R207TR Datasheet
In Stock92
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 56 A
Maximum Pulsed Drain Current (IDM): 337 A
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 83 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0051 ohm
Avalanche Energy Rating (EAS): 165 mJ
Maximum Feedback Capacitance (Crss): 220 pF
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
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