Infineon Technologies - IRF5N5210SCX

IRF5N5210SCX by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF5N5210SCX
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; No. of Elements: 1; Maximum Drain Current (ID): 31 A;
Datasheet IRF5N5210SCX Datasheet
In Stock368
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 125 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 31 A
Maximum Drain Current (Abs) (ID): 31 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
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