Infineon Technologies - IRF6216TR

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IRF6216TR by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF6216TR
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: MATTE TIN; Avalanche Energy Rating (EAS): 200 mJ; No. of Terminals: 8;
Datasheet IRF6216TR Datasheet
In Stock243
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.2 A
Maximum Pulsed Drain Current (IDM): 19 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .24 ohm
Moisture Sensitivity Level (MSL): 2
Avalanche Energy Rating (EAS): 200 mJ
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 150 V
Qualification: Not Qualified
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