Infineon Technologies - IRF6217PBF-1

  1. Home
  2. Infineon Technologies - IRF6217PBF-1
IRF6217PBF-1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IRF6217PBF-1
Description Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
Datasheet IRF6217PBF-1 Datasheet
In Stock953
NAME DESCRIPTION
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
953 - -

Popular Products

Category Top Products

T2N7002AK,LM by Toshiba

T2N7002AK,LM

Toshiba

Toshiba T2N7002AK,LM is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE configuration with built-in diode and resistor. Operating in ENHANCEMENT MODE, it has 1W power dissipation and max temp of 150°C.
BSS138PW,115 by Nexperia

BSS138PW,115

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .31 W; Minimum DS Breakdown Voltage: 60 V; Operating Mode: ENHANCEMENT MODE;
SI2302CDS-T1-GE3 by Vishay Intertechnology

SI2302CDS-T1-GE3

Vishay Intertechnology

SI2302CDS-T1-GE3 by Vishay Intertechnology is a N-channel FET for switching applications. It features 20V DS breakdown voltage, 2.6A max drain current, and 0.057ohm max on-resistance. With a small outline package and operating up to 150°C, it's ideal for compact electronic devices requiring efficient power management.
FDV301N_NL by Fairchild Semiconductor

FDV301N_NL

Fairchild Semiconductor

FDV301N_NL by Fairchild Semiconductor is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.22A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. This PLASTIC/EPOXY transistor comes in a GULL WING package style suitable for surface mount assembly.
L2N7002LT1G by Leshan Radio

L2N7002LT1G

Leshan Radio

Leshan Radio's L2N7002LT1G is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.115A ID. Ideal for small signal applications, it features a built-in diode, GULL WING terminals, and operates in enhancement mode. With a max power dissipation of 0.3W and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.
LBSS123LT1G by Leshan Radio

LBSS123LT1G

Leshan Radio

LBSS123LT1G by Leshan Radio is a N-CHANNEL FET with 100V DS Breakdown Voltage. It operates in ENHANCEMENT MODE, with 0.17A Drain Current and 6 ohm On Resistance. Ideal for small signal applications requiring high voltage tolerance and low power dissipation in compact designs.
BSS138W by Diodes Incorporated

BSS138W

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Power Dissipation Ambient: .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRLML2060TRPBF by Infineon Technologies

IRLML2060TRPBF

Infineon Technologies

Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN; Maximum Pulsed Drain Current (IDM): 4.8 A;
2V7002KT1G by Onsemi

2V7002KT1G

Onsemi

2V7002KT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.38A Drain Current, and 1.6ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150 °C with a max power dissipation of 0.42W.
BSS138W by Onsemi

BSS138W

Onsemi

BSS138W by Onsemi is a small signal N-CHANNEL FET with a min DS breakdown voltage of 50V. It is commonly used for switching applications due to its single configuration with built-in diode and max drain current of 0.21A.
BSS123,215 by Nexperia

BSS123,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;
2N7002K by Hy Electronic

2N7002K

Hy Electronic

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Additional Features: ULTRA LOW RESISTANCE; Package Body Material: PLASTIC/EPOXY;
BSP230,135 by Nexperia

BSP230,135

Nexperia

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1;
NTR5198NLT1G by Onsemi

NTR5198NLT1G

Onsemi

NTR5198NLT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 2.2A max drain current, and 0.205 ohm RDS(on). It's used in small outline packages for applications requiring high power dissipation up to 1.5W at 150°C, making it ideal for enhancement mode operations in various electronic circuits.
2N7000 by Fairchild Semiconductor

2N7000

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSS127H6327XTSA2 by Infineon Technologies

BSS127H6327XTSA2

Infineon Technologies

Infineon Technologies' BSS127H6327XTSA2 is a small signal N-channel FET with a min DS breakdown voltage of 600V. It operates in enhancement mode and has a max drain current of 0.021A. This transistor is commonly used in applications requiring high voltage switching and amplification.
S-LBSS84LT1G by Leshan Radio

S-LBSS84LT1G

Leshan Radio

Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
2N7000 by Motorola

2N7000

Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Drain Current (Abs) (ID): .2 A; No. of Elements: 1;
2N7002T by Temic Semiconductors

2N7002T

Temic Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
BC548B by North American Philips Discrete Products Div

BC548B

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;