IRF6644TR1PBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRF6644TR1PBF
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Additional Features: LOW CONDUCTION LOSS; Package Shape: RECTANGULAR;
Datasheet	IRF6644TR1PBF Datasheet
In Stock	1,262

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	10 A
Maximum Pulsed Drain Current (IDM):	228 A
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	89 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-XBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Power Dissipation Ambient:	2.8 W
Maximum Drain-Source On Resistance:	.013 ohm
Avalanche Energy Rating (EAS):	86 mJ
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Minimum DS Breakdown Voltage:	100 V
Additional Features:	LOW CONDUCTION LOSS
Maximum Drain Current (Abs) (ID):	10 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,262	-	-

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