Infineon Technologies - IRF7311

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IRF7311 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7311
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
Datasheet IRF7311 Datasheet
In Stock548
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6.6 A
Maximum Pulsed Drain Current (IDM): 26 A
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 2 W
Maximum Drain-Source On Resistance: .029 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 100 mJ
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED, HIGH RELIABILITY
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