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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | IRF7410TRPBF |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON; |
Datasheet | IRF7410TRPBF Datasheet |
In Stock | 15,826 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 16 A |
Maximum Pulsed Drain Current (IDM): | 65 A |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 8 |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G8 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .007 ohm |
Moisture Sensitivity Level (MSL): | 1 |
JEDEC-95 Code: | MS-012AA |
Polarity or Channel Type: | P-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 20 V |
Peak Reflow Temperature (C): | 260 |