Infineon Technologies - IRF7420TRPBF

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IRF7420TRPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7420TRPBF
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-PDSO-G8;
Datasheet IRF7420TRPBF Datasheet
In Stock3,067
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 11.5 A
Maximum Pulsed Drain Current (IDM): 46 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .014 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 12 V
Additional Features: ULTRA LOW RESISTANCE
Maximum Drain Current (Abs) (ID): 11.5 A
Peak Reflow Temperature (C): 260
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