Infineon Technologies - IRF7455PBF-1

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IRF7455PBF-1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7455PBF-1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Transistor Application: SWITCHING; Moisture Sensitivity Level (MSL): 1;
Datasheet IRF7455PBF-1 Datasheet
In Stock718
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 15 A
Maximum Pulsed Drain Current (IDM): 120 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .0075 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 200 mJ
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 30 V
Maximum Drain Current (Abs) (ID): 15 A
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