Infineon Technologies - IRF7465TRPBF

IRF7465TRPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7465TRPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 150 V; Transistor Application: SWITCHING; Terminal Position: DUAL;
Datasheet IRF7465TRPBF Datasheet
In Stock9,812
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.9 A
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 150 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .28 ohm
Moisture Sensitivity Level (MSL): 1
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