Infineon Technologies - IRF7509

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IRF7509 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7509
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 2.7 A; Maximum Drain-Source On Resistance: .11 ohm; JESD-30 Code: S-PDSO-G8;
Datasheet IRF7509 Datasheet
In Stock42
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.7 A
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-G8
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: ULTRA LOW RESISTANCE
Maximum Drain-Source On Resistance: .11 ohm
Moisture Sensitivity Level (MSL): 1
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