Infineon Technologies - IRF7701GPBF

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IRF7701GPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7701GPBF
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
Datasheet IRF7701GPBF Datasheet
In Stock177
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 1.5 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 10 A
Maximum Drain Current (Abs) (ID): 10 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
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