Infineon Technologies - IRF7739L2TRPBF

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IRF7739L2TRPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7739L2TRPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; No. of Terminals: 9; Package Style (Meter): CHIP CARRIER;
Datasheet IRF7739L2TRPBF Datasheet
In Stock451
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 375 A
Maximum Pulsed Drain Current (IDM): 1070 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 9
Maximum Power Dissipation (Abs): 125 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N9
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .001 ohm
Avalanche Energy Rating (EAS): 270 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e1
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 270 A
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