Infineon Technologies - IRF7756GTRPBF

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IRF7756GTRPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7756GTRPBF
Description P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Drain Current (ID): 4.3 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 4.3 A;
Datasheet IRF7756GTRPBF Datasheet
In Stock322
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 1 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 4.3 A
Maximum Drain Current (Abs) (ID): 4.3 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
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