Infineon Technologies - IRF7757GTRPBF

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IRF7757GTRPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7757GTRPBF
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Maximum Drain Current (Abs) (ID): 4.8 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
Datasheet IRF7757GTRPBF Datasheet
In Stock839
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 1.2 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 4.8 A
Maximum Drain Current (Abs) (ID): 4.8 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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