IRF7779L2TR1PBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRF7779L2TR1PBF
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Package Body Material: UNSPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	IRF7779L2TR1PBF Datasheet
In Stock	818

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	11 A
Maximum Pulsed Drain Current (IDM):	270 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	9
Maximum Power Dissipation (Abs):	125 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-XBCC-N9
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0011 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	270 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e1
Minimum DS Breakdown Voltage:	150 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	67 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
818	-	-

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