Infineon Technologies - IRF8010STRRPBF

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IRF8010STRRPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF8010STRRPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 260 W; Package Body Material: PLASTIC/EPOXY; Maximum Pulsed Drain Current (IDM): 320 A;
Datasheet IRF8010STRRPBF Datasheet
In Stock343
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 75 A
Maximum Pulsed Drain Current (IDM): 320 A
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 260 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .015 ohm
Avalanche Energy Rating (EAS): 310 mJ
Maximum Feedback Capacitance (Crss): 59 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
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