Infineon Technologies - IRF8910PBF

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IRF8910PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF8910PBF
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 10 A; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
Datasheet IRF8910PBF Datasheet
In Stock92,411
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 10 A
Maximum Pulsed Drain Current (IDM): 82 A
Surface Mount: YES
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .0134 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 19 mJ
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
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Pricing (USD)

Qty. Unit Price Ext. Price
92,411 $0.394 $36,409.934

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